P2A06BT datasheet(1/5 Pages) NIKOSEM

部品番号	P2A06BT

部品情報	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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REV 1.1

1

H-48-3

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P2A06BT

TO-220

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

2,3

TC = 25 °C

ID

198

A

TC = 100 °C

140

Pulsed Drain Current

1,2

IDM

900

Avalanche Current

IAS

123

Avalanche Energy

L = 0.1mH

EAS

754

mJ

Power Dissipation

TC = 25 °C

PD

230

W

TC = 100 °C

115

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 175

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

0.65

°C / W

Junction-to-Ambient

RJA

62.5

°C / W

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed.

3Package limitation current is 110A.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

60

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.8

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 48V, VGS = 0V

1

A

VDS = 40V, VGS = 0V, TJ = 125 °C

10

1.GATE

2.DRAIN

3.SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

60V

2.8mΩ

198A

G

D

S

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