KCP5-16 datasheet(1/3 Pages) KEXIN

部品番号	KCP5-16

部品情報	PNP Medium Power Transistors

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メーカー	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Transistors

SOT-223

Unit: mm

3.00

+0.1

-0.1

0.70

+0.1

-0.1

2.9

4.6

6.50

+0.2

-0.2

3.50

+0.2

-0.2

0.90

+0.2

-0.2

7.00

+0.3

-0.3

1

2

4

3

PNP Medium Power Transistors

3

■ Features

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO IC=- 0.1mA,IE=0

-100

V

Collector-emitter breakdown voltage

V(BR)CEO IC= -10mA,IB=0

-80

V

Base-emitter breakdown voltage

V(BR)EBO IC= -10μA,IE=0

-5

V

Collector cutoff current

ICBO

VCB = -30 V, IE = 0

-100

nA

Emitter cutoff current

IEBO

VEB = -5 V, IC = 0

-100

nA

IC = -5 mA; VCE = -2 V

25

IC = -150 mA; VCE = -2 V

100

250

IC = -500 mA; VCE = -2 V

25

Collector-emitter saturation voltage

VCE(sat) IC = -500 mA; IB = -50 mA

-0.5

V

Base to emitter voltage

VBE

IC = -500 mA; VCE = -2 V

-1

V

Transition frequency

fT

IC = -50 mA; VCE = -10 V; f = 100 MHz

100

MHz

DC current gain

hFE

■ Marking

Marking

BCP53

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector-base voltage (open emitter)

VCBO

-100

V

Collector-emitter voltage(open base)

VCEO

-80

V

Emitter-base voltage( open collector)

VEBO

-5

V

Collector current

IC

-1

A

power dissipation

PD

1.5

W

thermal resistance from junction to ambient

RθJA

83.3

℃/W

Junction temperature

Tj

150

℃

Storage temperature

Tstg

-65 to +150

℃

KCP5 -16

● For AF driver and output stages

● High collector current

● Low collector-emitter saturation voltage

1

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