STM32MP157C datasheet(209/258 Pages) STMICROELECTRONICS

209 / 258 page

DS12505 Rev 2

209/258

STM32MP157C

Electrical characteristics

238

6.3.26

DTS characteristics

6.3.27

VBAT ADC monitoring characteristics and charging characteristics

Table 84. Temperature sensor calibration values

Symbol

Parameter

Memory address

TS_CAL1

TS ADC raw data acquired at temperature of

30 °C ±5 °C

VDDA = VREF+ = 3.3 V ±10 mV

0x5C00 525C[15:0](1)(2)

1. It is mandatory to read a 32-bit word and to do relevant masking and shifting to isolate the required bits.

2. This address is located inside the BSEC and the access is allowed after being enabled in the RCC.

TS_CAL2

TS ADC raw data acquired at temperature of

130 °C ±2 °C

VDDA = VREF+ = 3.3 V ±10 mV

0x5C00 525C[31:16](1)(2)

Table 85. DTS characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fDTS

Output Clock frequency (PTAT

clock)

500

kHz

TSLOPE

Average slope

1600

Hz/°C

Linearity with temperature (from

Output clock frequency).

VDDCORE = 1.2 V

3.8

°C

TTOTAL_

ERROR

Temperature measurement error

VDDCORE = 1.2 V

Temperature:

-40 to 125 °C

-5

°C

TVDD

CORE

Additional error due to VDDCORE

variation

°C/V

tTRIM

Calibration time

tWAKE_UP

Wake-up time from off state until

DTS ready signal = 1

μs

IDDCORE_DTS DTS consumption on VDDCORE

µA

1. Guaranteed by design.

Table 86. VBAT ADC monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-26

kΩ

Ratio on VBAT measurement

Er(1)

1. Guaranteed by design.

Error on Q

–10

+10

tS_vbat(1)

ADC sampling time when reading VBAT input

9.8

µs

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