STM32G47PBY3XXX datasheet(163/229 Pages) STMICROELECTRONICS

部品番号	STM32G47PBY3XXX

部品情報	Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator

PDF	229 Pages

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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163 / 229 page

DS12712 Rev 3

163/229

STM32G473xB STM32G473xC STM32G473xE

Electrical characteristics

194

5.3.23

Temperature sensor characteristics

5.3.24

VBAT monitoring characteristics

Table 76. TS characteristics

Symbol

Parameter

Min

Typ

Max

Unit

TL(1)

1. Guaranteed by design.

VTS linearity with temperature

±1

±2

°C

Avg_Slope(1)

Average slope

2.3

2.5

2.7

mV/°C

V30

Voltage at 30°C (±5 °C)(2)

2. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer

to Table 5: Temperature sensor calibration values.

0.742

0.76

0.785

tSTART-RUN(1)

Start-up time in Run mode (start-up of buffer)

µs

tSTART_CONT(3)

Continuous mode means RUN mode or Temperature Sensor ON.

Start-up time when entering in continuous

mode

120

µs

tS_temp(1)

ADC sampling time when reading the

temperature

µs

IDD(TS)(1)

Temperature sensor consumption from VDD,

when selected by ADC

-4.7

µA

Table 77. VBAT monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-39

kΩ

QRatio on VBAT measurement

Er(1)

1. Guaranteed by design.

Error on Q

-10

tS_vbat(1)

ADC sampling time when reading the

VBAT

µs

Table 78. VBAT charging characteristics

Symbol

Parameter Conditions

Min

Typ

Max

Unit

RBC

Battery

charging

resistor

VBRS = 0

kΩ

VBRS = 1

1.5

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