STM32WB35CCU6ATR datasheet(118/193 Pages) STMICROELECTRONICS

118 / 193 page

Electrical characteristics

STM32WB55xx STM32WB35xx

118/193

DS11929 Rev 10

tWUSTOP2

Wake up time from

Stop 2 mode



to Run mode in Flash

memory



SMPS bypassed

Range 1

Wakeup clock MSI = 32 MHz

5.27

6.07

µs

Wakeup clock HSI16 = 16 MHz

5.71

6.52

Range 2

Wakeup clock HSI16 = 16 MHz

5.72

6.52

Wakeup clock MSI = 4 MHz

9.10

9.93

Wake up time from

Stop 2 mode to Run

mode in SRAM1



SMPS bypassed

Range 1

Wakeup clock MSI = 32 MHz

5.20

5.94

Wakeup clock HSI16 = 16 MHz

5.64

6.42

Range 2

Wakeup clock HSI16 = 16 MHz

5.64

6.43

Wakeup clock MSI = 4 MHz

9.05

9.85

tWUSTBY

Wakeup time from

Standby mode



to Run mode



SMPS Bypassed

Range 1

Wakeup clock HSI16 = 16 MHz

51.0

58.1

µs

1. Guaranteed by characterization results (VDD = 3 V, .T = 25 °C).

Table 51. Low-power mode wakeup timings(1) (continued)

Symbol

Parameter

Conditions

Typ

Max

Unit

Table 52. Regulator modes transition times(1)

Symbol

Parameter

Conditions

Typ

Max

Unit

tWULPRUN

Wakeup time from Low-power run mode to

Run mode(2)

Code run with MSI 2 MHz

15.33

16.30

µs

tVOST

Regulator transition time from Range 2 to

Range 1 or Range 1 to Range 2(3)

Code run with HSI16

21.4

28.9

1. Guaranteed by characterization results (VDD = 3 V, T = 25 °C).

2. Time until REGLPF flag is cleared in PWR_SR2.

3. Time until VOSF flag is cleared in PWR_SR2.

Table 53. Wakeup time using LPUART(1)

Symbol

Parameter

Conditions

Typ

Max

Unit

tWULPUART

Wakeup time needed to calculate the maximum

LPUART baud rate allowing to wakeup up from Stop

mode when LPUART clock source is HSI16

Stop mode 0

1.7

µs

Stop mode 1/2

8.5

1. Guaranteed by design.

STM32WB35CCU6ATR データシート(PDF) 118 Page - STMicroelectronics

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