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STM32469VG データシート(PDF) 119 Page - STMicroelectronics |
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STM32469VG データシート(HTML) 119 Page - STMicroelectronics |
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119 / 220 page ![]() DS11189 Rev 7 119/220 STM32F469xx Electrical characteristics 191 5.3.10 Internal clock source characteristics The parameters given in Table 39 and Table 40 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator Figure 33. ACCHSI vs. temperature 1. Based on test during characterization. Table 39. HSI oscillator characteristics (1) 1. VDD = 3.3 V, PLL off, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design -- - 1 % HSI oscillator accuracy TA = –40 to 105 °C(3) 3. Based on test during characterization. − 8-4.5 % TA = –10 to 85 °C(3) − 4- 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. − 1- 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA MSv41055V1 -8 -6 -4 -2 0 2 4 6 -40 0 25 55 85 105 125 TA (°C) Min Max Typical |
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