UN2119 datasheet(1/3 Pages) PANASONIC

部品番号	UN2119

部品情報	Silicon PNP epitaxial planar type

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メーカー	PANASONIC [Panasonic Semiconductor]

ホームページ	http://www.panasonic.com/industrial/

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1

Publication date: March 2004

SJJ00131BED

Composite Transistors

XP01119 (XP1119)

Silicon PNP epitaxial planar type

For switching/digital circuits

■ Features

• Two elements incorporated into one package

(Emitter-coupled transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

■ Basic Part Number

• UNR2119 (UN2119) × 2

■ Absolute Maximum Ratings T

a

= 25°C

Internal Connection

Marking Symbol: 7P

■ Electrical Characteristics T

a

= 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Ratio between 2 elements

12

Tr1

Tr2

3

4

5

Note) The part number in the parenthesis shows conventional part number.

1: Base (Tr1)

4: Collector (Tr2)

2: Emitter

5: Collector (Tr1)

3: Base (Tr2)

EIAJ: SC-88A

SMini5-G1 Package

Unit: mm

1

3

2

0.20±0.05

1.3±0.1

2.0±0.1

54

(0.65) (0.65)

0.12

+0.05

–0.02

10˚

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC

= −10 µA, I

E

= 0

−50

V

Collector-emitter voltage (Base open)

VCEO

IC = −2 mA, IB = 0

−50

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = −50 V, IE = 0

− 0.1

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE

= −50 V, I

B

= 0

− 0.5

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB = −6 V, IC = 0

−1.5

mA

Forward current transfer ratio

hFE

VCE = −10 V, IC = −5 mA

30



hFE Ratio *

hFE(Small

VCE

= −10 V, I

C

= −5 mA

0.50

0.99



/Large)

Collector-emitter saturation voltage

VCE(sat)

IC

= −10 mA, I

B

= − 0.3 mA

− 0.25

V

Output voltage high-level

VOH

VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ−4.9

V

Output voltage low-level

VOL

VCC = −5 V, VB = −2.5 V, RL = 1 kΩ− 0.2

V

Input resistance

R1

−30%

1

+30%

k

Ω

Resistance ratio

R1 / R2

0.08

0.10

0.12



Transition frequency

fT

VCB = −10 V, IE = 1 mA, f = 200 MHz

80

MHz

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

−50

V

Collector-emitter voltage (Base open)

VCEO

−50

V

Collector current

IC

−100

mA

Total power dissipation

PT

150

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

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