1

Schottky Barrier Diodes (SBD)

MA2X707

Silicon epitaxial planar type

For UHF mixer

I Features

• Small forward voltage V

F

• Optimum for UHF mixer because of its large conversion gain

(GC)

• Mini type package, allowing downsizing of equipment and

automatic insertion through the taping package

I Absolute Maximum Ratings T

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

5V

Forward voltage

0.5

V

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Marking Symbol: 5B

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward current (DC)

35

100

mA

Reverse current (DC)

35

µA

Forward voltage (DC)

0.25

V

Reverse break down voltage (DC)

5

V

Terminal capacitance

0.65

0.85

1.05

pF

1,2

GC

−7

−5dB

Static breakdown strength

C = 100 pF, Breakdown judgment

100

200

V

≥ 35 µA

I Electrical Characteristics T

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

 

2. Noise figure is 8.5 dB.

3. Rated input/output frequency: 935 MHz

4. *1 : Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed.

*2 : Set min. GC =

−7 dB. Out-spec products, if any, this specification would be reviewed

12

3.3

± 0.2

*(3.8

± 0.2)

2.7

+ 0.2

− 0.1

INDICATES

CATHODE

5

°

5

°

*(

): WL type

1 : Anode

2 : Cathode

Mini Type Package (2-pin)