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データシートサーチシステム |
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MBT3904L データシート(PDF) 2 Page - AiT Semiconductor Inc. |
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MBT3904L データシート(HTML) 2 Page - AiT Semiconductor Inc. |
2 / 9 page ![]() AiT Semiconductor Inc. www.ait-ic.com MBT3904L SWITCHING TRANSISTOR NPN TRANSISTOR REV1.2 - MAY 2011 RELEASED, JUN 2018 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in. NOTE2: Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. VCEO, Collector-Emitter Voltage 40Vdc VCBO, Collector-Base Voltage 60Vdc VEBO, Emitter-Base Voltage 6.0Vdc IC, Collector Current-Continuous 200mAdc Parameter Symbol Max Unit Total Device Dissipation FR-5 Board NOTE1 TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate NOTE2 TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ , Tstg -55 to +150 °C |
同様の部品番号 - MBT3904L |
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同様の説明 - MBT3904L |
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