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MA3ZD12 データシート(PDF) 1 Page - Panasonic Semiconductor

部品番号 MA3ZD12
部品情報  Silicon epitaxial planar type
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メーカー  PANASONIC [Panasonic Semiconductor]
ホームページ  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

MA3ZD12 データシート(HTML) 1 Page - Panasonic Semiconductor

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1
Schottky Barrier Diodes (SBD)
MA3ZD12
Silicon epitaxial planar type
For high-speed switching circuits
I Features
• S-mini type 3-pin package
• Allowing to rectify under (I
F(AV) = 700 mA) condition
• Low forward rise voltage V
F (VF < 0.45 V)
• Allowing high-density mounting
I Absolute Maximum Ratings T
a = 25°C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
20
V
Repetitive peak reverse voltage
VRRM
25
V
Average forward current*
2
IF(AV)
700
mA
Non-repetitive peak forward
IFSM
2A
surge current*1
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1 : Anode
2 : NC
3 : Cathode
Flat S-Mini Type Package (3-pin)
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2 : Mounted on a alumina printed circuit board
Internal Connection
Marking Symbol: M5E
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 20 V
200
µA
Forward voltage (DC)
VF
IF = 700 mA
0.45
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
100
pF
Reverse recovery time
trr
IF = IR = 100 mA
7
ns
Irr = 10 mA, RL = 100
I Electrical Characteristics T
a = 25°C ± 3°C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
1
2
3
2.1
± 0.1
1.25
± 0.1
0.425
0.425
1
3
2


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