1

Schottky Barrier Diodes (SBD)

MA6X718

Silicon epitaxial planar type

For switching circuits

For wave detection circuit

I Features

• Three MA3X704As in the same direction are contained in one

package

• Optimum for low-voltage rectification because of its low forward

• Optimum for high-frequency rectification because of its short re-

I Absolute Maximum Ratings T

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

30

V

150

mA

30

mA

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

4 : Anode 3

5 : Anode 2

6 : Anode 1

Mini Type Package (6-pin)

Internal Connection

Marking Symbol: M2N

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

1

µA

Forward voltage (DC)

0.4

V

1.0

V

Terminal capacitance

1.5

pF

1.0

ns

Detection efficiency

η

65

%

Ω, C

I Electrical Characteristics T

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

 

2. Rated input/output frequency: 2 000 MHz

1 : Cathode 1

2 : Cathode 2

3 : Cathode 3

2.8

+ 0.2

− 0.3

1.5

+ 0.25

− 0.05

0.65

± 0.15

0.65

± 0.15

1

6

5

4

3

2

0.4

± 0.2

0.1 to 0.3

6

5

4

1

2

3

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

Note) * : Value in per diode