HBC114YS6R datasheet(2/4 Pages) CYSTEKEC

部品番号	HBC114YS6R

部品情報	Dual NPN Digital Transistors

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メーカー	CYSTEKEC [Cystech Electonics Corp.]

ホームページ	http://www.cystekec.com

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2 / 4 page

CYStech Electronics Corp.

Spec. No. : C355S6R

Issued Date : 2003.05.23

Revised Date :

Page No. : 2/4

HBC114YS6R

CYStek Product Specification

Absolute Maximum Ratings (Each Transistor, Ta=25℃)

Parameter

Symbol

Limits

Unit

Supply Voltage

VCC

50

V

Input Voltage

VIN

-6~+40

V

IO

70

mA

Output Current

IO(max.)

100

mA

Power Dissipation

Pd

200 (Note)

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55~+150

°C

Note: 150mW per element must not be exceeded.

Electrical Characteristics (Each Transistor, Ta=25℃)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

VI(off)

-

0.3

V

VCC=5V, IO=100µA

Input Voltage

VI(on)

3

-

V

VO=0.3V, IO=1mA

Output Voltage

VO(on)

-

0.1

0.3

V

IO/II=5mA/0.25mA

Input Current

II

-

0.88

mA

VI=5V

Output Current

IO(off)

-

0.5

µA

VCC=50V, VI=0V

DC Current Gain

GI

68

-

VO=5V, IO=5mA

Input Resistance

R1

7

10

13

k

Ω

-

Resistance Ratio

R2/R1

3.7

4.7

5.7

-

Transition Frequency

fT

-

250

-

MHz

VCE=10V, IC=5mA, f =100MHz *

* Transition frequency of the device

Characteristic Curves

DC Current Gain vs Output Current

10

100

1000

1

10

100

Output Current ---Io(mA)

Vo=5V

Output Voltage vs Output Current

10

100

1000

1

10

100

Output Current ---Io(mA)

Io/Ii=20

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