©2006 Fairchild Semiconductor Corporation

1

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MPSW01 Rev. A

MPSW01

NPN General Purpose Amplifier

Features

• This device is designed for general purpose medium power amplifiers

• Sourced from process 37

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Note :

1) These ratings are based on a maximum junction temperature 150 ‘C

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

30

V

Collector-Base Voltage

40

V

Emitter-Base Voltage

5.0

V

Collector Current - Continuous

1.0

A

Total Device Dissipation

Derate about 25

°C

1.0

8.0

W

mW/

°C

Operating Junction and Storage Temperature Range

-55 to +150

°C

Symbol

Parameter

Value

Units

Thermal Resistance, Junction to Case

*

50

°C/W

Thermal Resistance, Junction to Ambien

*

125

°C/W