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MPSW01 データシート(PDF) 2 Page - Fairchild Semiconductor

部品番号 MPSW01
部品情報  NPN General Purpose Amplifier
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

MPSW01 データシート(HTML) 2 Page - Fairchild Semiconductor

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MPSW01 Rev. A
Electrical Characteristics (Note) T
a = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Small Signal Characteristics
Note :
1) These ratings are based on a maximum junction temperature 150 ‘C
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
3)
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤1.0%
Typical Characteristics
Symbol
Parameter
Test Condition
MIN
MAX
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 uA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100 uA, IC = 0
5.0
V
ICBO
Collector-Cutoff Current
VCB = 30 V, IE = 0
0.1
uA
IEBO
Emitter-Cutoff Current
VEB = 3.0 V, IC = 0
0.1
uA
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 1.0 A, VCE = 1.0 V
55
60
50
VCE(sat)
Collector-Emitter Saturation Voltage
* IC = 1.0A, IB = 100 mA
0.5
V
VBE(on)
Emitter-Base On Voltage
*
IC = 1.0A, VCE = 1.0 V
1.2
V
fT
Small-Signal Current Gain
IC = 50 mA, VCE = 10 V, f = 20 MHz
50
MHz
Ccb
Collector-Base Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
20
pF


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