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MPSW01 データシート(PDF) 2 Page - Fairchild Semiconductor |
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MPSW01 データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page 2 www.fairchildsemi.com MPSW01 Rev. A Electrical Characteristics (Note) T a = 25°C unless otherwise noted Off Characteristics On Characteristics Small Signal Characteristics Note : 1) These ratings are based on a maximum junction temperature 150 ‘C 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations 3) *Pulse Test: Pulse Width≤300µs, Duty Cycle≤1.0% Typical Characteristics Symbol Parameter Test Condition MIN MAX Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 uA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 uA, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 0.1 uA IEBO Emitter-Cutoff Current VEB = 3.0 V, IC = 0 0.1 uA hFE DC Current Gain IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 1.0 A, VCE = 1.0 V 55 60 50 VCE(sat) Collector-Emitter Saturation Voltage * IC = 1.0A, IB = 100 mA 0.5 V VBE(on) Emitter-Base On Voltage * IC = 1.0A, VCE = 1.0 V 1.2 V fT Small-Signal Current Gain IC = 50 mA, VCE = 10 V, f = 20 MHz 50 MHz Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 20 pF |
同様の部品番号 - MPSW01 |
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同様の説明 - MPSW01 |
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