1

Transistors with built-in Resistor

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/

211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Silicon PNP epitaxial planer transistor

For digital circuits

q

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through tape packing and magazine packing.

Marking Symbol

q

UN2111

6A

10k

Ω

10k

Ω

q

UN2112

6B

22k

Ω

22k

Ω

q

UN2113

6C

47k

Ω

47k

Ω

q

UN2114

6D

10k

Ω

47k

Ω

q

UN2115

6E

10k

Ω

—

q

UN2116

6F

4.7k

Ω

—

q

UN2117

6H

22k

Ω

—

q

UN2118

6I

0.51k

Ω

5.1k

Ω

q

UN2119

6K

1k

Ω

10k

Ω

q

UN2110

6L

47k

Ω

—

q

UN211D

6M

47k

Ω

10k

Ω

q

UN211E

6N

47k

Ω

22k

Ω

q

UN211F

6O

4.7k

Ω

10k

Ω

q

UN211H

6P

2.2k

Ω

10k

Ω

q

UN211L

6Q

4.7k

Ω

4.7k

Ω

q

UN211M

EI

2.2k

Ω

47k

Ω

q

UN211N

EW

4.7k

Ω

47k

Ω

q

UN211T

EY

22k

Ω

47k

Ω

q

UN211V

FC

2.2k

Ω

2.2k

Ω

q

UN211Z

FE

4.7k

Ω

22k

Ω

1:Base

2:Emitter

EIAJ:SC-59

3:Collector

Mini Type Package

Unit: mm

Internal Connection

Parameter

Symbol

Ratings

Unit

Collector to base voltage

–50

V

Collector to emitter voltage

–50

V

Collector current

–100

mA

Total power dissipation

200

mW

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

B

C

R1

R2

E