NPN TRANSISTOR

C945

100mA

AF OUTPUT AMPLIFIER

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃）

PARAMETERS

SYMBOL MIN TYP MAX UNIT

CONDITION

Collector-Emitter Breakdown Voltage

BVceo

50

V

Ic=1mA

Collector-Base Breakdown Voltage

BVcbo

60

V

Emitter-Base Breakdown Voltage

BVebo

5

V

Ie=50μA

Collector-Base Leakage

Icbo

0.1

uA

Vcb=60V

Emitter-Base Leakage

Iebo

0.1

uA

Veb=5V

Collector-Emitter Saturation Voltage

Vce（sat）

0.18

0.3

V

Ic=100mA, Ib=10mA

DC Current Gain

Hfe

90

200

600

Vce=6.0V,Ic=1.0mA

Collector Current

Ic

100

mA

Current Gain Bandwidth

100

180

MHz

Vce=6V, Ie=10mA

Output Capacitance

Cob

4.5

6.0

pF

Vcb=10V,Ie=0,f=1MHz

Power Dissipation

Pc

0.25

W

Junction Temperature

Tj

125

℃

Storage Temperature

Tstg

-55

125

℃

Classification of Hfe

Rank

R

Q

P

K

Range

90-180

135-270

200-400

300-600

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