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BTN8962 データシート(PDF) 81 Page - Infineon Technologies AG

部品番号 BTN8962
部品情報  High Current PN Half Bridge
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メーカー  INFINEON [Infineon Technologies AG]
ホームページ  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BTN8962 データシート(HTML) 81 Page - Infineon Technologies AG

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ESL = ∫t
SL1
tSL2V
S ⋅ IOUT dt =
VS ⋅ IOUT
2
⋅ tHS − off
Equation 47
From the switching energy ESL the average power loss PSL can be determined with two switching times per PWM
period. This is shown in Equation 48:
PSL =
VS ⋅ IOUT
2
⋅ 2 ⋅ tHS − off ⋅ fPWM = VS ⋅ IOUT ⋅ tHS − off ⋅ fPWM
Equation 48
6.4
Entire power dissipation of the MOSFETs
The average power dissipation in PWM-mode consists of the switching losses plus the conducted losses, as
shown in Figure 86. We must take into account that the losses occur in the high-side (HS) and low-side (LS)
MOSFET. In the example of Figure 85, where the motor is connected to GND, the switching losses occur in the
high-side (HS) MOSFET. The conducted losses occur in the high-side (HS) MOSFET during the ON-phase and in
the low-side (LS) MOSFET in the free wheeling phase, as shown in Figure 86.
In PWM-mode, the PWM-period-time is:
TPWM =
1
fPWM
Equation 49
The duty cycle (DC) of the PWM-mode is the relation between the ON-time and the PWM-period-time in percent.
DC =
TON
TPWM
Equation 50
t
t
VOUT
VIN
TON = TPWM · DC
actuator losses
conducted
losses
(free wheeling )
conducted
losses
(ON-phase )
TPWM
Figure 86 Entire power dissipation of BTN89xy with the motor connected to GND
In Chapter 6.4.2 and Chapter 6.4.3 the power dissipation is estimated separately for the high-side (HS) and low-
side (LS) MOSFET.
BTN8960 /62 /80 /82
High Current PN Half Bridge
Power Dissipation
Application Note
81
Rev. 0.6
2017-02-21


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