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BTN8962 データシート(PDF) 1 Page - Infineon Technologies AG |
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BTN8962 データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 94 page BTN8960 /62 /80 /82 High Current PN Half Bridge About this document Scope and purpose This Application Note is intended to provide information and hints for a high current design, using PWM control with the NovalithIC™ half-bridge family BTN89xy for the automotive environment. Note: The following information is only given to help with the implementation of the device and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. Abstract This family contains one P-channel high-side MOSFET and one N-channel low-side MOSFET with an integrated driver IC in one package. The NovalithIC™ BTN89xy is the interface between the microcontroller and the motor, equipped with diagnostic and protection functions. IS SR INH IN GND OUT VS Gate Driver HS Slewrate Adjustment Digital Logic Undervolt. detection Overtemp. detection Overcurr. Detection LS Overcurr. Detection HS Current Sense Gate Driver LS LS off HS off Figure 1 Block Diagram BTN89xy As both the high-side and low side switch are placed on one single leadframe this results in many system benefits: Resulting from the low distance between the high-side MOSFET and the low-side MOSFETthe stray inductance between them is minimal thus minimizing negative voltage spikes at OUT during switching and improving EMC. As the voltage level of the leadframe is on the output of the half-bridge, only one single cooling area is required (on OUT potential) for the device, thus being used for both a high-side or low-side current switching. For a state of the art N-channel solution, usually two cooling areas are required, each for the high- side and low-side MOSFET. Application Note Please read the Important Notice and Warnings at the end of this document Rev. 0.6 www.infineon.com 2017-02-21 |
同様の部品番号 - BTN8962 |
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同様の説明 - BTN8962 |
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