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BTN8962 データシート(PDF) 18 Page - Infineon Technologies AG |
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BTN8962 データシート(HTML) 18 Page - Infineon Technologies AG |
18 / 94 page ![]() In Figure 6 a cooling area (brown top layer, where the NovalithIC™-OUT is connected) has already been drawn. Depending on the power dissipation, other thermal sources on the PCB and the ambient temperature, the cooling needs to be carefully adapted to each application. In addition the reverse polarity protection transistor T1 (Figure 5 and Figure 6) generates RDS,on power losses and the cooling concept for this transistor must ensure that the device does not exceed the absolute maximum junction temperature. BTN8960 /62 /80 /82 High Current PN Half Bridge Design Guideline Application Note 18 Rev. 0.6 2017-02-21 |
同様の部品番号 - BTN8962 |
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同様の説明 - BTN8962 |
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