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2N2222 データシート(PDF) 2 Page - NXP Semiconductors |
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2N2222 データシート(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 May 29 2 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-18) and symbol. handbook, halfpage MAM264 1 3 2 3 1 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltage open base 2N2222 − 30 V 2N2222A − 40 V IC collector current (DC) − 800 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW hFE DC current gain IC = 10 mA; VCE =10V 75 − fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2222 250 − MHz 2N2222A 300 − MHz toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 250 ns |
同様の部品番号 - 2N2222 |
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同様の説明 - 2N2222 |
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