2N2222 datasheet(3/8 Pages) PHILIPS

部品番号	2N2222

部品情報	NPN switching transistors

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メーカー	PHILIPS [NXP Semiconductors]

ホームページ	http://www.nxp.com

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3 / 8 page

1997 May 29

3

Philips Semiconductors

Product speciﬁcation

NPN switching transistors

2N2222; 2N2222A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

2N2222

−

60

V

2N2222A

−

75

V

VCEO

collector-emitter voltage

open base

2N2222

−

30

V

2N2222A

−

40

V

VEBO

emitter-base voltage

open collector

2N2222

−

5V

2N2222A

−

6V

IC

collector current (DC)

−

800

mA

ICM

peak collector current

−

800

mA

IBM

peak base current

−

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

−

500

mW

Tcase ≤ 25 °C

−

1.2

W

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

200

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air

350

K/W

Rth j-c

thermal resistance from junction to case

146

K/W

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