BSH202 datasheet(6/8 Pages) NEXPERIA

部品番号	BSH202

部品情報	P-channel enhancement mode MOS transistor

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Philips Semiconductors

Product specification

P-channel enhancement mode

BSH202

MOS transistor

Fig.13. Typical turn-on gate-charge characteristics.

V

GS = f(QG)

Fig.14. Typical reverse diode current.

I

F = f(VSDS); conditions: VGS = 0 V; parameter Tj

BSH202

-14

-12

-10

-8

-6

-4

-2

0

01234

Gate charge, (nC)

Gate-source voltage, VGS (V)

VDD = 15 V

RD = 50 Ohms

Tj = 25 C

BSH202

0

0.5

1

1.5

2

2.5

3

3.5

4

0

0.5

1

1.5

2

Drain-Source Voltage, VSDS (V)

Source-Drain Diode Current, IF (A)

Tj = 25 C

150 C

August 1998

5

Rev 1.000

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