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ST7FL15F1MATRE データシート(PDF) 110 Page - STMicroelectronics |
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ST7FL15F1MATRE データシート(HTML) 110 Page - STMicroelectronics |
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110 / 138 page  ST7L15, ST7L19 110/138 ELECTRICAL CHARACTERISTICS (cont’d) 13.6 MEMORY CHARACTERISTICS 13.6.1 RAM and Hardware Registers TA = -40 to +125°C, unless otherwise specified. 13.6.2 Flash Program Memory TA = -40 to +85°C, unless otherwise specified 13.6.3 EEPROM Data Memory TA = -40 to +125°C, unless otherwise specified Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg- isters (only in HALT mode). Guaranteed by construction, not tested in production. 2. Up to 32 bytes can be programmed at a time. 3. The data retention time increases when the TA decreases. 4. Data based on reliability test results and monitored in production. 5. Guaranteed by Design. Not tested in production. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode1) HALT mode (or RESET) 1.6 V Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for Flash write/erase Refer to operating range of VDD with TA, section 13.3.1 on page 100 3.0 5.5 V tprog Programming time for 1~32 bytes2) TA =−40 to +85°C 5 10 ms Programming time for 1.5 Kbytes TA = 25°C 0.24 0.48 s tRET 4) Data retention TA = 55°C 3) 20 years NRW Write erase cycles TPROG = 25°C 1K cycles TPROG = 85°C 300 IDD Supply current Read / Write / Erase modes fCPU = 8 MHz, VDD = 5.5V 2.65) mA No Read/No Write Mode 100 µA Power down mode / HALT 0 0.1 Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for EEPROM write/ erase Refer to operating range of VDD with TA, section 13.3.1 on page 100 3.0 5.5 V tprog Programming time for 1~32 bytes TA =−40 to +125°C 5 10 ms tRET 4) Data retention with 1k cycling (TPROG = −40 to +125°C TA = 55°C 3) 20 years Data retention with 10k cycling (TPROG = −40 to +125°C) 10 Data retention with 100k cycling (TPROG = −40 to +125°C) 1 |
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