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2N4124 データシート(PDF) 1 Page - Fairchild Semiconductor |
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2N4124 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page 2N4124 MMBT4124 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units 2N4124 *MMBT4124 PD Total Device Dissipation Derate above 25 °C 625 5.0 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W C B E TO-92 C B E SOT-23 Mark: ZC 2001 Fairchild Semiconductor Corporation 2N4124/MMBT4124, Rev A |
同様の部品番号 - 2N4124_01 |
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同様の説明 - 2N4124_01 |
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