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データシートサーチシステム |
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2N4124 データシート(PDF) 2 Page - Fairchild Semiconductor |
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2N4124 データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page ![]() Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS ON CHARACTERISTICS* V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, I E = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, I C = 0 5.0 V ICBO Collector Cutoff Current VCB = 20 V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA hFE DC Current Gain IC = 2.0 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V 120 60 360 VCE(sat) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz 300 MHz Cobo Output Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF Cibo Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 kHz 8.0 pF Ccb Collector-Base Capcitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF hfe Small-Signal Current Gain VCE = 10 V, IC = 2.0 mA, f = 1.0 kHz 120 480 NF Noise Figure IC = 100 µA, V CE = 5.0 V, RS =1.0k Ω, f=10 Hz to 15.7 kHz 5.0 dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NPN General Purpose Amplifier (continued) |
同様の部品番号 - 2N4124_01 |
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同様の説明 - 2N4124_01 |
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