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MPSA18 データシート(PDF) 1 Page - Fairchild Semiconductor |
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MPSA18 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page ![]() Discrete POWER & Signal Technologies NPN General Purpose Amplifier MPSA18 This device is designed for low noise, high gain, applications at collector currents from 1 µ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted µµ Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 45 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units MPSA18 PD Total Device Dissipation Derate above 25 °C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W C B E TO-92 © 1997 Fairchild Semiconductor Corporation |
同様の部品番号 - MPSA18_01 |
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同様の説明 - MPSA18_01 |
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