PN930_02 datasheet(1/4 Pages) FAIRCHILD

部品番号	PN930

部品情報	NPN General Purpose Amplifier

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Rev. B, November 2002

Absolute Maximum Ratings* T

A=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics T

A=25°C unless otherwise noted

* Pulse Test: Pulse Width

≤ 300ms, Duty Cycle ≤ 2.0%

Symbol

Parameter

Value

Units

VCEO

Collector-Emitter Voltage

45

V

VCBO

Collector-Base Voltage

45

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current

- Continuous

100

mA

TJ, TSTG

Operating and Storage Junction Temperature Range

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

V(BR)CEO

Collector-Emitter Breakdown Voltage *

IC = 10mA, IB = 0

45

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 10µA, IE = 0

45

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10nA, IC = 0

5.0

V

ICEO

Collector Cutoff Current

VCE = 5.0V

2.0

nA

ICBO

Collector Cutoff Current

VCB = 45V, IE = 0

10

nA

ICES

Collector Cutoff Current

VCB = 45V, IE = 0

VCB = 45V, IE = 0, TA = 170°C

10

nA

µA

IEBO

Emitter Cutoff Current

VEB = 5.0V, IC = 0

10

nA

On Characteristics

hFE

DC Current Gain

VCE = 5.0V, IC = 10µA

VCE = 5.0V, IC = 10µA, TA = -55°C

VCE = 5.0V, IC = 500µA

VCE = 5.0V, IC = 10mA

10

20

150

300

600

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 10mA, IB = 0.5mA

1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 10mA, IB = 0.5mA

0.6

1.0

V

Small Signal Characteristics

Cob

Output Capacitance

VCB = 5.0V, f = 1.0MHz

8.0

pF

hfe

Small Signal Current Gain

IC = 500µA, VCE = 5.0V, f = 20MHz

IC = 1.0mA, VCE = 5.0V, f = 1.0KHz

1.5

150

600

hib

Input Impedance

IC = 1.0mA, VCE = 5.0V, f = 1.0KHz

25

32

Ω

hrb

Voltage Feedback Ratio

600

x10-6

hob

Output Admittance

1.0

µmho

NF

Noise Figure

VCE = 5.0V, IC = 10µA

RG = 10KΩ, BW = 15.7KHz

3.0

dB

PN930

NPN General Purpose Amplifier

• This device is designed for low noise, high gain, general purpose

applications at collector currents from 1

µA to 50mA.

1. Emitter 2. Base 3. Collector

TO-92

1

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