1N4001 datasheet(1/4 Pages) WTE

部品番号	1N4001

部品情報	1.0A STANDARD DIODE

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メーカー	WTE [Won-Top Electronics]

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1N4001 – 1N4007

1 of 4

Pb

1N4001 – 1N4007

1.0A STANDARD DIODE

Features

!

Diffused Junction

!

Low Forward Voltage Drop

!

High Current Capability

A

B

A

!

High Reliability

!

High Surge Current Capability

Mechanical Data

C

!

Case: DO-41, Molded Plastic

D

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 0.35 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

!

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Maximum Ratings and Electrical Characteristics @T

A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1N

4001

1N

4002

1N

4003

1N

4004

1N

4005

1N

4006

1N

4007

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

50

100

200

400

600

800

1000

V

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

560

700

V

Average Rectified Output Current

(Note 1)

@TA = 75°C

IO

1.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

IFSM

30

A

Forward Voltage

@IF = 1.0A

VFM

1.0

V

Peak Reverse Current

@TA = 25°C

At Rated DC Blocking Voltage

@TA = 100°C

IRM

5.0

50

µA

Typical Junction Capacitance (Note 2)

Cj

15

pF

Typical Thermal Resistance Junction to Ambient

(Note 1)

RJA

50

°C/W

Operating Temperature Range

Tj

-65 to +125

°C

Storage Temperature Range

TSTG

-65 to +150

°C

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

WTE

POWER SEMICONDUCTORS

DO-41

Dim

Min

Max

A

25.4

—

B

4.06

5.21

C

0.71

0.864

D

2.00

2.72

All Dimensions in mm

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