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SB2540CT データシート(PDF) 1 Page - Won-Top Electronics

部品番号 SB2540CT
部品情報  25A DUAL SCHOTTKY BARRIER RECTIFIER
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メーカー  WTE [Won-Top Electronics]
ホームページ  http://www.wontop.com
Logo WTE - Won-Top Electronics

SB2540CT データシート(HTML) 1 Page - Won-Top Electronics

  SB2540CT Datasheet HTML 1Page - Won-Top Electronics SB2540CT Datasheet HTML 2Page - Won-Top Electronics SB2540CT Datasheet HTML 3Page - Won-Top Electronics SB2540CT Datasheet HTML 4Page - Won-Top Electronics  
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SB2520CT – SB25100CT
1 of 4
© 2006 Won-Top Electronics
Pb
SB2520CT – SB25100CT
25A DUAL SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
B
!
Guard Ring for Transient Protection
!
Low Forward Voltage Drop
C
!
Low Reverse Leakage Current
!
High Surge Current Capability
G
A
!
Plastic Material has UL Flammability
Classification 94V-O
PIN1
2
3
                D
Mechanical Data
F
E
!
Case: TO-220, Molded Plastic
!
Terminals: Plated Leads Solderable per
P
MIL-STD-202, Method 208
!
Polarity: See Diagram
I
!
Weight: 2.24 grams (approx.)
!
Mounting Position: Any
H
L
!
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 -
+
J
PIN 3 -
Case, PIN 2
K
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB
2520CT
SB
2530CT
SB
2540CT
SB
2545CT
SB
2550CT
SB
2560CT
SB
2580CT
SB
25100CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
45
50
60
80
100
V
RMS Reverse Voltage
VR(RMS)
14
21
28
32
35
42
56
70
V
Average Rectified Output Current @TC = 95°C
IO
25
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
200
A
Forward Voltage
@IF = 12.5A
VFM
0.55
0.75
0.85
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 100°C
IRM
0.5
100
mA
Typical Junction Capacitance (Note 1)
Cj
1100
pF
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
TO-220
Dim
Min
Max
A
13.90
15.90
B
9.80
10.70
C
2.54
3.43
D
3.56
4.56
E
12.70
14.73
F
0.51
0.96
G
3.55 Ø
4.09 Ø
H
5.75
6.85
I
4.16
5.00
J
2.03
2.92
K
0.30
0.65
L
1.14
1.40
P
2.29
2.79
All Dimensions in mm


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