ST7FLITE25F2M6 datasheet(103/133 Pages) STMICROELECTRONICS

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ST7LITE2

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13.6 MEMORY CHARACTERISTICS

TA = -40°C to 85°C, unless otherwise specified

13.6.1 RAM and Hardware Registers

13.6.2 FLASH Program Memory

13.6.3 EEPROM Data Memory

Notes:

1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-

isters (only in HALT mode). Guaranteed by construction, not tested in production.

2. Up to 32 bytes can be programmed at a time.

3. The data retention time increases when the TA decreases.

4. Data based on reliability test results and monitored in production.

5. Data based on characterization results, not tested in production.

6. Guaranteed by Design. Not tested in production.

7. Design target value pending full product characterization.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode 1)

HALT mode (or RESET)

1.6

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for Flash write/erase

2.4

5.5

tprog

Programming time for 1~32 bytes 2)

TA=−40 to +85°C

Programming time for 1.5 kBytes

TA=+25°C

0.24

0.48

tRET

Data retention 4)

TA=+55°C

years

NRW

Write erase cycles

TA=+25°C

10K7)

cycles

IDD

Supply current

Read / Write / Erase

modes

fCPU = 8MHz, VDD = 5.5V

2.66)

No Read/No Write Mode

100

µA

Power down mode / HALT

0.1

µA

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for EEPROM

write/erase

2.4

5.5

tprog

Programming time for 1~32 bytes

TA=−40 to +85°C

tret

Data retention 4)

TA=+55°C

years

NRW

Write erase cycles

TA=+25°C

300K7)

cycles

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