G250N03IEA

www.gofordsemi.com

TEL：0755-29961263

FAX:0755-29961466(A1666-V1.1)

Figure 5. Capacitance

Figure 6. Source-Drain Diode Forward

Typical Characteristics TJ = 25ºC, unless otherwise noted

0

5

10

15

20

25

30

35

40

0

1

2

3

4

10V

4.5V

3.5V

3V

2.5V

VGS=3.3V

0

5

10

15

20

25

30

35

40

0

1

2

3

4

5

6

VDS= 5V

25℃

0

10

20

30

40

50

60

0

2

4

6

8

VGS= 4.5V

VGS= 10V

VGS= 2.5V

0

100

200

300

400

500

600

700

800

900

1000

0

5

10

15

20

25

30

Ciss

Coss

Crss

0

1

2

3

4

5

0

2

4

6

8

10

VDD = 15V

ID = 4A

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

Figure 3. Drain Source On Resistance

Figure 4. Gate Charge

ID-Drain Current（A）

Qg Gate Charge（nC）

VDS Drain-Source Voltage(V)

VSD, Source-to-Drain Voltage (V)

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)