G250N03IEA

www.gofordsemi.com

TEL：0755-29961263

FAX:0755-29961466(A1666-V1.1)

Absolute Maximum Ratings TC = 25ºC, unless otherwise noted

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

30

V

Continuous Drain Current

ID

5.3

A

Pulsed Drain Current

(note1)

IDM

22

A

Gate-Source Voltage

VGS

±

10

V

Power Dissipation

PD

1.4

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 To 150

ºC

Thermal Resistance

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-Ambient

RthJA

89

ºC/W

N-Channel Enhancement Mode Power MOSFET

Description

The G250N03IEA uses advanced trench technology to

provide excellent RDS(ON) , low gate charge. It can be used in

a wide variety of applications.

AEC-Q101 Qualified

General Features

l

VDS

30V

l

ID (at VGS = 10V)

5.3A

l

RDS(ON) (at VGS = 10V)

< 25mΩ

l

RDS(ON) (at VGS = 4.5V)

< 30mΩ

l

RDS(ON) (at VGS = 2.5V)

< 50mΩ

l

100% Avalanche Tested

l

RoHS Compliant

l

ESD (HBM)>4.0KV

Application

l

Power switch

l

DC/DC converters

Ordering Information

Device

Package

Marking

Packaging

G250N03IEA

SOT-23

G250N03

3000pcs/Reel

Schematic diagram

SOT-23