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データシートサーチシステム |
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2SB1375 データシート(PDF) 2 Page - Toshiba Semiconductor |
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2SB1375 データシート(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page ![]() 2SB1375 2006-11-21 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −60 V, IE = 0 ― ― −10 μA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ― ― −10 μA Collector-emitter breakdown voltage V (BR) CEO IC = −50 mA, IB = 0 −60 ― ― V hFE (1) VCE = −5 V, IC = −0.5 A 100 ― 320 DC current gain hFE (2) VCE = −5 V, IC = −2 A 15 ― ― Collector-emitter saturation voltage VCE (sat) IC = −2 A, IB = −0.2 A ― −1.0 −1.5 V Base-emitter voltage VBE VCE = −5 V, IC = −0.5 A ― −0.75 −1.0 V Transition frequency fT VCE = −5 V, IC = −0.5 A ― 9 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 50 ― pF Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. B1375 Part No. (or abbreviation code) |
同様の部品番号 - 2SB1375_06 |
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同様の説明 - 2SB1375_06 |
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