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2SB1411 データシート(PDF) 1 Page - Toshiba Semiconductor |
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2SB1411 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page ![]() 2SB1411 2006-11-21 1 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −7 V DC IC −2 Collector current Peak ICP −3 A Base current IB −0.5 A Ta = 25°C 2.0 Collector power dissipation Tc = 25°C PC 20 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Base Emitter ≈ 7 kΩ Collector ≈ 150 Ω |
同様の部品番号 - 2SB1411_06 |
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同様の説明 - 2SB1411_06 |
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