BC817-16 datasheet(2/4 Pages) BILIN

部品番号	BC817-16

部品情報	NPN General Purpose Amplifier

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メーカー	BILIN [Galaxy Semi-Conductor Holdings Limited]

ホームページ	http://www.galaxycn.com

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2 / 4 page

BL Galaxy Electrical

Production specification

NPN General Purpose Amplifier

BC817-16/-25/-40

Document number: BL/SSSTC042

www.galaxycn.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=10μA IE=0

50

V

Collector-emitter breakdown

voltage

V(BR)CEO

IC=10mA IB=0

45

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1μA IC=0

5

V

Collector cut-off current

ICBO

VCB=45V IE=0

0.1

μ

A

Collector cut-off current

ICEO

VCE=40V IBE(off)=0

0.2

μ

A

Emitter cut-off current

IEBO

VEB=4V IC=0

0.1

μ

A

DC current gain

817-16

817-25

817-40

hFE

VCE=10V IC=150mA

100

160

250

400

600

Collector-emitter saturation voltage VCE(sat)

IC=500mA IB=50mA

0.7

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA IB=50mA

1.2

V

Transition frequency

fT

VCE=5V

IC=10mA

f=100MHz

100

MHz

同様の部品番号 - BC817-16

メーカー	部品番号	データシート	部品情報
Yea Shin Technology Co....	BC817-16	629Kb / 3P	General Purpose Transistors
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Pan Jit International I...	BC817-16	462Kb / 3P	NPN GENERAL PURPOSE TRANSISTORS
SHENZHEN YONGERJIA INDU...	BC817-16	225Kb / 2P	NPN EPTTAXIAL SILICON TRANSISTOR

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