4250 datasheet(53/59 Pages) RENESAS

部品番号	4250

部品情報	SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

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メーカー	RENESAS [Renesas Technology Corp]

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52

MITSUBISHI MICROCOMPUTERS

4250 Group

SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

Parameter

“L” level output voltage

F0, F1, S0–S3, D0, D1, D2/C, D3/K

“L” level output voltage

G0, G1/TOUT, G2, G3

“H” level input current

F0, F1, S0–S3, D0, D1, RESET

“H” level input current

G0/INT, G1, G2, G3, D2/C, D3/K

“L” level input current

F0, F1, S0–S3, D0, D1, D2/C, D3/K,

G0/INT, G1, G2, G3, RESET

Output current at off-state

F0, F1, S0–S3, D0, D1

Output current at off-state

G0, G1/TOUT, G2, G3, D2/C, D3/K

Supply current

Pull-up transistor

G0/INT, G1, G2, G3, D2/C, D3/K

Hysteresis INT

Hysteresis S0–S3

Hysteresis RESET

Test conditions

VDD = 5 V

VDD = 3 V

VDD = 5 V

VDD = 3 V

VI = 7 V

VI = VDD

VI = 0 V (Note)

VO = 7 V

VO = VDD

VDD = 5 V

VDD = 3 V

Ta = 25

°C

VDD = 5 V

VDD = 3 V

VDD = 5 V, VI = 0 V

VDD = 5 V

VDD = 3 V

Limits

Symbol

VOL

IIH

IIL

IOZH

IDD

RPU

VT+ – VT–

Unit

V

µA

mA

µA

k

Ω

V

Max.

2

0.9

2

0.9

1

–1

1

5

1

10

6

25

Typ.

1.5

0.3

0.1

11

0.3

1.8

0.7

Min.

5

0.1

IOL = 12 mA

IOL = 6 mA

IOL = 5 mA

IOL = 2 mA

f(XIN) = 4.0 MHz

f(XIN) = 1.0 MHz

at active mode

at RAM back-up mode

Note: In this case, the pull-up transistors for G0/INT pin and ports G1, G2, G3, D2/C and D3/K are not selected.

ELECTRICAL CHARACTERISTICS

(Ta = –20

°C to 85 °C, VDD = 2.2 V to 5.5 V, unless otherwise noted)

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