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4250 データシート(PDF) 32 Page - Renesas Technology Corp |
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4250 データシート(HTML) 32 Page - Renesas Technology Corp |
32 / 59 page ![]() 31 MITSUBISHI MICROCOMPUTERS 4250 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER t/2 (S) t/2 (S) t (S) VDD(V) VSS(V) Fig. 30 External clock input waveform Key-on wakeup When system returns from RAM back-up state by using the G0/INT pin, select the return edge (rising edge or falling edge) with the bit 2 of register K0 according to the external state before going into the RAM back-up state. When system returns from RAM back-up state by using the ports G1–G3 and S0–S3, set the port using the key-on wakeup function selected with register K0 to “H” level before going into the RAM back-up state. G0/INT pin and ports G1–G3, S0–S3 share the circuit which is used to detect the edge and to recognize “L” level. The G0/INT pin cannot be set to “no key-on wakeup.” External clock input waveform When the external clock is used, open XOUT pin, and input the clock waveform into XIN pin shown below. (Refer to Figure 30) •Duty ratio = 50 %. •“H” level input voltage=VDD (V), “L” level input voltage=VSS (V). CR oscillation constant Use the external 30 pF capacitor and enable to change the frequency by the external resistor. Test the system sufficiently because the oscillation constant depends on the ROM type (mask ROM or PROM). |
同様の部品番号 - 4250 |
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同様の説明 - 4250 |
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