BA12001B datasheet(2/6 Pages) ROHM

部品番号	BA12001B

部品情報	High voltage, high current Darlington transistor array

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メーカー	ROHM [Rohm]

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BA12001B / BA12003B / BA12003BF / BA12004B

Standard ICs

Internal circuit configuration

IN

COM

OUT

GND

3k

Ω

7.2k

Ω

Fig.1 BA12001B

IN

COM

OUT

GND

3k

Ω

7.2k

Ω

2.7k

Ω

Fig.2 BA12003B / BF

IN

COM

OUT

GND

3k

Ω

7.2k

Ω

10.5k

Ω

Fig.3 BA12004B

Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

Limits

Unit

VCE

60

V

Input voltage

Input current

VIN

−0.5∼+30

V

other than BA12001B

BA12001B

DIP package

SOP package

IIN

25

Output current

IOUT

500

Ground pin current

IGND

2.3∗1

A

Power dissipation

Pd

1250∗2

625∗3

mW

Diode reverse voltage

VR

60

V

Diode forward current

IF

500

mA

Operating temperature

Topr

−25∼+75

˚C

Storage temperature

Tstg

−55∼+150

˚C

mA / unit

Power supply voltage

∗1 Pulse width ≤ 20ms, duty cycle ≤ 10%, same current for all 7 circuits

∗2 Reduced by 10mW for each increase in Ta of 1˚C over 25˚C .

∗3 Reduced by 50mW for each increase in Ta of 1˚C over 25˚C .

Recommended operating conditions (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Output current

IOUT

−−

350

mA

Fig.9, 10

Power supply voltage

VCE

−−

55

V

−

Input voltage (excluding BA12001B)

VIN

−−

30

V

−

Input current (BA12001B only)

IIN

−−

25

−

mA / unit

同様の部品番号 - BA12001B

メーカー	部品番号	データシート	部品情報
Rohm	BA12001B	115Kb / 7P	High voltage, high current Darlington transistor array
Rohm	BA12001B	115Kb / 7P	High voltage, high current Darlington transistor array

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同様の説明 - BA12001B

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