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BTN7975B データシート(PDF) 7 Page - Infineon Technologies AG |
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BTN7975B データシート(HTML) 7 Page - Infineon Technologies AG |
7 / 26 page ![]() Data Sheet 7 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B General Product Characteristics Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Maximum Single Pulse Current Figure 4 BTN7975B Maximum Single Pulse Current ( T C < 85°C) This diagram shows the maximum single pulse current that can be driven for a given pulse time t pulse. The maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited due to thermal protection of the device. 0 10 20 30 40 50 60 70 80 90 100 1,0E-03 1,0E-02 1,0E-01 1,0E+00 1,0E+01 t pulse[s] |
同様の部品番号 - BTN7975B |
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同様の説明 - BTN7975B |
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