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BTN7975B データシート(PDF) 10 Page - Infineon Technologies AG |
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BTN7975B データシート(HTML) 10 Page - Infineon Technologies AG |
10 / 26 page ![]() Data Sheet 10 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5.2 Power Stages The power stages of the BTN7975B consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing power dissipation in the forward operation of the integrated diodes. The on state resistance R ON is dependent on the supply voltage VS as well as on the junction temperature Tj. The typical on state resistance characteristics are shown in Figure 6. Figure 6 Typical ON State Resistance vs. Supply Voltage 5 10 15 20 25 4 8 12 16 20 24 28 High Side Switch T j = 150°C T j = 25°C T j = -40°C V S [V] 5 10 15 20 25 4 8 12 16 20 24 28 Low Side Switch T j = 150°C T j = 25°C T j = -40°C V S [V] |
同様の部品番号 - BTN7975B |
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同様の説明 - BTN7975B |
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