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BTN7975B データシート(PDF) 15 Page - Infineon Technologies AG |
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BTN7975B データシート(HTML) 15 Page - Infineon Technologies AG |
15 / 26 page ![]() Data Sheet 15 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5.3 Protection Functions The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation (Chapter 5.3.4). In a fault condition the BTN7975B will apply the highest slew rate possible independent of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current I ST_error at the ST pin as described in the paragraph “Status Flag Diagnosis” on Page 19 and Figure 12. In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other error modes. 5.3.1 Overvoltage Lock Out To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts the lowside MOSFET off and turns the highside MOSFET on, if the supply voltage is exceeding the over voltage protection level V OV(OFF). The IC operates in normal mode again with a hysteresis V OV(HY) if the supply voltage decreases below the switch- on voltage V OV(ON). In H-bridge configuration, this behavior of the BTN7975B will lead to freewheeling in highside during over voltage. 5.3.2 Undervoltage Shut Down To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the supply voltage drops below the switch-off voltage V UV(OFF). The IC becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage V UV(ON). 5.3.3 Overtemperature Protection The BTN7975B is protected against overtemperature by an integrated temperature sensor. Overtemperature leads to a shut down of both output stages. This state is latched until the device is reset by a low signal with a minimum length of t reset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis ΔT in the meantime. Repetitive use of the overtemperature protection impacts lifetime. 5.3.4 Current Limitation The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch (high side or low side) is reaching the limit I CLx, this switch is deactivated and the other switch is activated for tCLS. During that time all changes at the IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off. After t CLS the switches return to their initial setting. The error signal at the ST pin is reset after 2* t CLS. Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the effective current limitation level I CLx depends on the slew rate of the load current dI/dt as shown in Figure 10. |
同様の部品番号 - BTN7975B |
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同様の説明 - BTN7975B |
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