2SC2873_04 datasheet(1/5 Pages) TOSHIBA

部品番号	2SC2873

部品情報	Power Amplifier Applications Power Switching Applications

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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2SC2873

2004-07-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC2873

Power Amplifier Applications

Power Switching Applications

• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)

• High-speed switching time: tstg = 1.0 µs (typ.)

• Small flat package

• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

• Complementary to 2SA1213

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

2

A

Base current

IB

0.4

A

PC

500

Collector power dissipation

PC

(Note 1)

1000

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note 1: Mounted on a ceramic substrate (250 mm

2 × 0.8 t)

Unit: mm

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)

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