2N3904 datasheet(2/4 Pages) KEC

部品番号	2N3904

部品情報	EPITAXIAL PLANAR NPN TRANSISTOR

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メーカー	KEC [KEC(Korea Electronics)]

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CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICEX

VCE=30V, VEB=3V

-

50

nA

Base Cut-off Current

IBL

VCE=30V, VEB=3V

-

50

nA

Collector-Base Breakdown Voltage

V(BR)CBO

IC=10 A, IE=0

60

-

V

Collector-Emitter Breakdown Voltage *

V(BR)CEO

IC=1mA, IB=0

40

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=10 A, IC=0

6.0

-

V

DC Current Gain

*

hFE(1)

VCE=1V, IC=0.1mA

40

-

hFE(2)

VCE=1V, IC=1mA

70

-

hFE(3)

VCE=1V, IC=10mA

100

-

300

hFE(4)

VCE=1V, IC=50mA

60

-

hFE(5)

VCE=1V, IC=100mA

30

-

Collector-Emitter Saturation Voltage

*

VCE(sat)1

IC=10mA, IB=1mA

-

0.2

V

VCE(sat)2

IC=50mA, IB=5mA

-

0.3

Base-Emitter Saturation Voltage

*

VBE(sat)1

IC=10mA, IB=1mA

0.65

-

0.85

V

VBE(sat)2

IC=50mA, IB=5mA

-

0.95

Transition Frequency

fT

VCE=20V, IC=10mA, f=100MHz

300

-

MHz

Collector Output Capacitance

Cob

VCB=5V, IE=0, f=1MHz

-

4.0

pF

Input Capacitance

Cib

VBE=0.5V, IC=0, f=1MHz

-

8.0

pF

Input Impedance

hie

VCE=10V, IC=1mA, f=1kHz

1.0

-

10

k

Voltage Feedback Ratio

hre

0.5

-

8.0

x10

-4

Small-Signal Current Gain

hfe

100

-

400

Collector Output Admittance

hoe

1.0

-

40

Noise Figure

NF

VCE=5V, IC=0.1mA Rg=1k ,

f=10Hz

15.7kHz

-

5.0

dB

Switching Time

Delay Time

td

Vout

Total< 4pF

C

10kΩ

V =3.0V

CC

300ns

-0.5V

10.9V

0

t ,t < 1ns, Du=2%

r

in

V

f

-

35

nS

Rise Time

tr

-

35

Storage Time

tstg

20µs

1N916

or equiv.

10.9V

-9.1V

Vout

Total< 4pF

C

V =3.0V

CC

10kΩ

Vin

0

t ,t < 1ns, Du=2%

rf

-

200

Fall Time

tf

-

50

2002. 9. 12

2/4

Revision No : 1

ELECTRICAL CHARACTERISTICS (Ta=25

)

2N3904

* Pulse Test : Pulse Width

300 S, Duty Cycle

2%.

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