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2N4033 データシート(PDF) 2 Page - Semicoa Semiconductor

部品番号 2N4033
部品情報  Type 2N4033 Geometry 6700 Polarity PNP
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メーカー  SEMICOA [Semicoa Semiconductor]
ホームページ  http://www.semicoa.com/
Logo SEMICOA - Semicoa Semiconductor

2N4033 データシート(HTML) 2 Page - Semicoa Semiconductor

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Data Sheet No. 2N4033
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA, pulsed
Collector-Emitter Breakdown Voltage
IC = 10 mA, pulsed
Emitter-Base Breakdown Voltage
IC = 10 µA, pulsed
Collector-Base Cutoff Current
VCB = 60 V
ICBO1
---
10
nA
VCB = 60 V, TA = +150
oC
ICBO2
---
25
µA
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 2.0 V
Base-Emitter Cutoff Current
VBE = 3 V
IEBO
---
25
nA
nA
V
Electrical Characteristics
TC = 25
oC unless otherwise specified
V
V
V(BR)CBO
80
---
ICEX1
---
25
V(BR)CEO
80
---
V(BR)EBO
5.0
---
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
IC = 100 µA, VCE = 5 V
hFE1
50
---
---
IC = 100 mA, VCE = 5.0 V (pulse test)
hFE2
100
300
---
IC = 500 mA, VCE = 5 V (pulse test)
hFE3
70
---
---
IC = 1.0 A, VCE = 5 V (pulse test)
hFE4
25
---
---
IC = 500 mA, VCE = 5.0 V (pulse test), TA = -55
oC
hFE5
30
---
---
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
VCE(sat)1
---
0.15
V dc
IC = 500 mA, IB = 50 mA (pulse test)
VCE(sat)2
---
0.5
V dc
IC = 1.0 A, IB = 100 mA (pulse test)
VCE(sat)3
---
1.0
V dc
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
VBE(sat)1
---
0.9
V dc
IC = 500 mA, IB = 50 mA (pulse test)
VBE(sat)2
---
1.2
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 10 V, IC = 50 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
CIBO
---
80
pF
pF
COBO
---
20
---
|hfe|
1.5
6.0
Switching Characteristics
Symbol
Min
Max
Unit
Delay Time
IC = 500 mA, IB1 = 50 mA
Rise Time
IC = 500 mA, IB1 = 50 mA
Storage Time
IC = 500 mA, IB1 = IB2 = 50 mA
Fall Time
IC = 500 mA, IB1 = IB2 = 50 mA
tf
---
35
ns
ts
---
175
ns
tr
---
25
ns
ns
td
---
15


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