TK14A55D

2010-08-27

2

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

⎯

⎯

±1

μA

Drain cut-off current

⎯

⎯

10

μA

Drain-source breakdown voltage

550

⎯

⎯

V

Gate threshold voltage

2.0

⎯

4.0

V

Drain-source ON-resistance

⎯

0.31

0.37

Ω

Forward transfer admittance

1.8

6.5

⎯

S

Input capacitance

⎯

2300

⎯

Reverse transfer capacitance

⎯

10

⎯

Output capacitance

⎯

250

⎯

pF

Rise time

⎯

50

⎯

Turn-on time

⎯

100

⎯

Fall time

⎯

25

⎯

Switching time

Turn-off time

Duty

⎯

140

⎯

ns

Total gate charge

⎯

40

⎯

Gate-source charge

⎯

25

⎯

Gate-drain charge

⎯

15

⎯

nC

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current (Note 1)

⎯

⎯

⎯

14

A

Pulse drain reverse current

(Note 1)

⎯

⎯

⎯

56

A

Forward voltage (diode)

⎯

⎯

−1.7

V

Reverse recovery time

⎯

1600

⎯

ns

Reverse recovery charge

⎯

20

⎯

μC

Marking

Note 4: A line under a Lot No. identifies the indication of product

Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

Lot No.

Note 4

K14A55D

Part No. (or abbreviation code)

0 V

10 V

50

Ω