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データシートサーチシステム |
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DTL9604 データシート(PDF) 1 Page - DinTek Semiconductor Co,.Ltd |
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DTL9604 データシート(HTML) 1 Page - DinTek Semiconductor Co,.Ltd |
1 / 8 page ![]() 1 N-Channel 60 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested •Low Qg for High Efficiency APPLICATIONS • Primary Side Switch • POL • Synchronous Rectifier • DC/DC Converter • Amusement System • Industrial • LED Backlighting Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a Qg (Typ.) 60 0.0027 at VGS = 10 V 60 27.5 nC 0.0033 at VGS = 6 V 60 0.0048 at VGS = 4.5 V 60 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 60a A TC = 70 °C 60a TA = 25 °C 35.8b, c TA = 70 °C 28.6b, c Pulsed Drain Current (60 µs Pulse Width) IDM 350 Continuous Source-Drain Diode Current TC = 25 °C IS 60a TA = 25 °C 5.6b, c Single Pulse Avalanche Current L = 0.1 mH IAS 40 Single Pulse Avalanche Energy EAS 80 mJ Maximum Power Dissipation TC = 25 °C PD 104 W TC = 70 °C 66.6 TA = 25 °C 6.25b, c TA = 70 °C 4b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient t 10 s RthJA 15 20 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 0.9 1.2 TO-220AB Top View GD S DT www. daysemi.jp |
同様の部品番号 - DTL9604 |
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同様の説明 - DTL9604 |
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