2N7002K-T1-E3 datasheet(4/9 Pages) VISHAY

部品番号	2N7002K-T1-E3

部品情報	N-Channel 60-V (D-S) MOSFET

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Document Number: 71333

S09-0857-Rev. E, 18-May-09

Vishay Siliconix

2N7002K

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage Variance Over Temperature

1.2

1.5

1

100

1000

0.0

0.3

0.6

0.9

TJ = 125 °C

VSD - Source-to-Drain Voltage (V)

10

TJ = - 55 °C

VGS = 0 V

TJ = 25 °C

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Junction Temperature (°C)

On-Resistance vs. Gate-Source Voltage

Single Pulse Power, Junction-to-Ambient

0

1

2

3

4

5

02468

10

VGS - Gate-to-Source Voltage (V)

ID = 500 mA

ID = 200 mA

0.01

0

1

2.5

3

100

600

0.1

Time (s)

1.5

2

0.5

1

10

TA = 25 °C

Normalized Thermal Transient Impedance, Junction-to-Ambient

10

10-3

10-2

1

10

600

10-1

-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 350 °C/W

3. T JM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

同様の部品番号 - 2N7002K-T1-E3

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