3

1997 Fairchild Semiconductor Corporation

BSR14

NPN General Purpose Amplifier

This device is for use as a medium power amplifier and switch

requiring collector currents up to 500 mA. Sourced from Process

19. See BCW65C for characteristics.

C

B

E

SOT-23

Mark: U8

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

*BSR14

Total Device Dissipation

Derate above 25

°C

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

357

°C/W

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

40

V

Collector-Base Voltage

75

V

Emitter-Base Voltage

6.0

V

Collector Current - Continuous

800

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C