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データシートサーチシステム |
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データシートサーチシステム |
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BSR14 データシート(PDF) 2 Page - Fairchild Semiconductor |
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BSR14 データシート(HTML) 2 Page - Fairchild Semiconductor |
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2 / 3 page  Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 µA, IB = 0 75 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V ICBO Collector-Cutoff Current VCB = 60 V VCB = 60 V, TA = 150 °C 10 10 nA µA ICEX Collector-Cutoff Current VCE = 60 V, VEB = 3.0 V 10 nA IBEX Reverse Base Current VCE = 60 V, VEB = 3.0 V 20 nA IEBO Emitter-Cutoff Current VEB = 3.0 V, IC = 0 15 nA ON CHARACTERISTICS hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 10 V 35 50 75 100 50 40 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.3 1.0 V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.6 1.2 2.0 V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 20, f = 100 mHz 300 MHz CCB Collector-Base Capacitance VCB= 10V, IE = 0, f = 1.0 MHz 8.0 pF hie Input Impedance VCE=10V,IC=1.0 mA,f=1.0 kHz 2.0 8.0 k Ω hfe Small-Signal Current Gain VCE=10V,IC=1.0 mA,f=1.0 kHz 50 300 hoe Output Admittance VCE=10V,IC=1.0 mA,f=1.0 kHz 5 35 µS SWITCHING CHARACTERISTICS td Delay Time VCC = 30 V, VBE(OFF) = 0.5 V, 10 ns tr Rise Time IC = 150 mA, IB1 = 15 mA 25 ns ts Storage Time VCC = 30 V, IC = 150 mA, 225 ns tf Fall Time IB1 = IB2 = 15 mA 60 ns Spice Model NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10) NPN General Purpose Amplifier (continued) |
同様の部品番号 - BSR14 |
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同様の説明 - BSR14 |
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