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LM35AH データシート(PDF) 5 Page - Texas Instruments |
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LM35AH データシート(HTML) 5 Page - Texas Instruments |
5 / 25 page LM35 www.ti.com SNIS159C – AUGUST 1999 – REVISED JULY 2013 ELECTRICAL CHARACTERISTICS (1)(2) (continued) LM35 LM35C, LM35D UNITS PARAMETER TEST CONDITIONS TYP TESTED DESIGN TYP TESTED DESIGN (MAX.) LIMIT(3) LIMIT(4) LIMIT(3) LIMIT(4) VS = 5 V, 25°C 56 80 56 80 VS = 5 V 105 158 91 138 Quiescent current(8) µA VS = 30 V, 25°C 56.2 82 56.2 82 VS = 30 V 105.5 161 91.5 141 4 V ≤ VS ≤ 30 V, 25°C 0.2 2 0.2 2 Change of quiescent µA current(9) 4 V ≤ VS ≤ 30 V 0.5 3 0.5 3 Temperature +0.39 +0.7 +0.39 +0.7 coefficient of µA/°C quiescent current Minimum temperature In circuit of Figure 1, IL = 0 +1.5 +2 +1.5 +2 °C for rate accuracy Long term stability TJ = TMAX, for 1000 hours ±0.08 ±0.08 °C (8) Quiescent current is defined in the circuit of Figure 1. (9) Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be computed by multiplying the internal dissipation by the thermal resistance. Copyright © 1999–2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LM35 |
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